Journal: The Journal of Craniofacial Surgery

Article Title: Elective Sonolucent Cranioplasty for Real-Time Ultrasound Monitoring of Flow and Patency of an Extra- to Intracranial Bypass

doi: 10.1097/SCS.0000000000006225

Figure Lengend Snippet: The bone flap was used to determine the size and shape of the clear PMMA implant (A) and an approximately 3 × 3 cm cranioplasty implant was cut out (B, C) and fixated over the craniotomy defect using titanium screws and mini-plates allowing enough space inferiorly without compression of the STA graft moving from extra- to intracranial. STA mt, superficial temporal artery main trunk.

Article Snippet: Following successful anastomosis, the craniotomy defect was closed with a PMMA cranioplasty implant (Longeviti Neuro Solutions), which was drilled to fit the defect.

Techniques:

Journal: The Journal of Craniofacial Surgery

Article Title: Elective Sonolucent Cranioplasty for Real-Time Ultrasound Monitoring of Flow and Patency of an Extra- to Intracranial Bypass

doi: 10.1097/SCS.0000000000006225

Figure Lengend Snippet: Transcranioplasty ultrasound confirmed flow in donor STA under the cranioplasty (#) in real-time (A), allowed for quantitative flow measurements of the proximal STA donor vessel (B) and confirmed patency of the anastomosis (C). Postoperative CTA coronal view (D) and catheter angiogram in PA (E) lateral (F-G) planes confirmed bypass patency. ∗ bypass anastomosis, + moyamoya disease vessel occlusion. # transparent PMMA cranioplasty implant.

Article Snippet: Following successful anastomosis, the craniotomy defect was closed with a PMMA cranioplasty implant (Longeviti Neuro Solutions), which was drilled to fit the defect.

Techniques:

Journal: Nano-Micro Letters

Article Title: Toward High Carrier Mobility and Low Contact Resistance: Laser Cleaning of PMMA Residues on Graphene Surfaces

doi: 10.1007/s40820-016-0093-5

Figure Lengend Snippet: AFM topography images of mono-, bi-, and multilayer graphene, denoted as SLG, BLG, and MLG, respectively: before ( a – c ) and after PMMA contamination ( d – f ). Height profiles across the graphene edges are superimposed on the images

Article Snippet: To describe the process of laser cleaning, both the exfoliated and CVD graphene films on Si/SiO 2 substrate were intentionally spin-coated with a 270-nm-thick PMMA layer (Allresist AR-P 679.04), baked at 170 °C for 2 min, cooled to room temperature, and then placed in an acetone bath for 2 h to dissolve PMMA.

Techniques:

Journal: Nano-Micro Letters

Article Title: Toward High Carrier Mobility and Low Contact Resistance: Laser Cleaning of PMMA Residues on Graphene Surfaces

doi: 10.1007/s40820-016-0093-5

Figure Lengend Snippet: a Schematic of the laser cleaning process. AFM topography ( b ) and amplitude error ( c ) images of a PMMA residue-contaminated multilayer graphene after laser cleaning at 10 mW for 300 s. d Raman spectra of multilayer graphene before and after laser cleaning measured in situ at the central area in panel b

Article Snippet: To describe the process of laser cleaning, both the exfoliated and CVD graphene films on Si/SiO 2 substrate were intentionally spin-coated with a 270-nm-thick PMMA layer (Allresist AR-P 679.04), baked at 170 °C for 2 min, cooled to room temperature, and then placed in an acetone bath for 2 h to dissolve PMMA.

Techniques: Residue, In Situ

Journal: Nano-Micro Letters

Article Title: Toward High Carrier Mobility and Low Contact Resistance: Laser Cleaning of PMMA Residues on Graphene Surfaces

doi: 10.1007/s40820-016-0093-5

Figure Lengend Snippet: AFM topography images of a contact region before ( a ) and after ( b ) laser cleaning. Middle inset schematic of a PMMA mask pattern for fabrication of back-gated GFETs. c Output characteristics of two GFETs fabricated adjacently on a same graphene strip ( dotted white rectangle ) with identical geometry as shown in the lower inset . The electrodes are labeled as 1, 2, 3, and 4, respectively. The contact regions of GFET 12 with electrodes 1 and 2 are uncleaned; and the contact regions of GFET 34 with electrodes 3 and 4 are cleaned with laser exposure. Upper inset total resistance as a function of back-gate voltage ( V bg ) for GFET 12 and GFET 34 , respectively. Solid red lines are theoretical fits. d Histogram of contact resistivity of five GFET groups with ( red ) and without ( blue ) being cleaned at the contact regions. (Color figure online)

Article Snippet: To describe the process of laser cleaning, both the exfoliated and CVD graphene films on Si/SiO 2 substrate were intentionally spin-coated with a 270-nm-thick PMMA layer (Allresist AR-P 679.04), baked at 170 °C for 2 min, cooled to room temperature, and then placed in an acetone bath for 2 h to dissolve PMMA.

Techniques: Stripping Membranes, Labeling

Journal: Nano-Micro Letters

Article Title: Toward High Carrier Mobility and Low Contact Resistance: Laser Cleaning of PMMA Residues on Graphene Surfaces

doi: 10.1007/s40820-016-0093-5

Figure Lengend Snippet: Four spots on a multilayer graphene sequentially cleaned with laser exposure. a AFM amplitude error image of a lightly cleaned spot at 10 mW for 60 s (denoted as S1) and b at 30 mW for 180 s, marked as S2, S3, and S4 according to the laser irradiation order. White arrows indicate the directions of expulsion of PMMA residues. c AFM topography image of S2. d Height profile along the white dotted line , averaged over the red rectangular box in c . (Color figure online)

Article Snippet: To describe the process of laser cleaning, both the exfoliated and CVD graphene films on Si/SiO 2 substrate were intentionally spin-coated with a 270-nm-thick PMMA layer (Allresist AR-P 679.04), baked at 170 °C for 2 min, cooled to room temperature, and then placed in an acetone bath for 2 h to dissolve PMMA.

Techniques: Irradiation